DC substrate bias effects on the physical properties of hydrogenated amorphous carbon films grown by plasma-assisted chemical vapour deposition

被引：21

作者：

Buijnsters, J. G. ^{[1
]}

Camero, M. ^{[1
]}

Vazquez, L. ^{[1
]}

Agullo-Rueda, F. ^{[1
]}

Gomez-Aleixandre, C. ^{[1
]}

Albella, J. M. ^{[1
]}

机构：

[1] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain

来源：

VACUUM | 2007年 / 81卷 / 11-12期

关键词：

amorphous carbon; bias; PACVD; smoothness; hydrogen; tribology;

D O I：

10.1016/j.vacuum.2007.04.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrogenated amorphous carbon (a-C:H) films have been grown from argon/methane gas mixtures by electron cyclotron resonance chemical vapour deposition (ECR-CVD) on silicon substrates. The effects of the application of a DC substrate bias on the structural, morphological and mechanical properties of the films have been explored by multiple analysis techniques such as infrared and micro-Raman spectroscopy, atomic force microscopy, nanoindentation and pin-on-disk wear testing. In general, within the range of applied substrate bias (i.e. from -300 up to + 100V) we have observed a strong correlation between all measured properties of the a-C:H films and the ion energy. This work shows that the properties can differ greatly and indicates a threshold energy in the order of 90 eV. For the production of hard, low-friction coatings energies above this value are required. (C) 2007 Published by Elsevier Ltd.

引用

页码：1412 / 1415

页数：4

共 11 条

[1] Growth dynamics of ultrasmooth hydrogenated amorphous carbon films [J].