Amorphous silicon UV photodetectors with rejection of the visible spectrum

被引：8

作者：

deCesare, G ^{[1
]}

Iorio, V ^{[1
]}

Irrera, F ^{[1
]}

Palma, F ^{[1
]}

Tucci, M ^{[1
]}

机构：

[1] UNIV ROMA LA SAPIENZA, DIPARTIMENTO INGN ELETTRON, I-00185 ROME, ITALY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1996年 / 198卷

关键词：

D O I：

10.1016/0022-3093(96)00112-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A new family of a-Si:H/SiC:H p-i-n photodetectors is presented here. These devices are solar blind, with enhanced sensitivity in the extreme UV spectrum. Typical values of the quantum efficiency at 187 nm and 800 nm are 22% and 0.05%, respectively, with zero bias. Rise and decay times in the dark under a 1 V peak-to-peak square wave are less than 1 mu s. These devices are candidate for application in large area systems for detection of UV light.

引用

页码：1198 / 1201

页数：4

共 6 条

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