Current-induced cleaning of graphene

被引：519

作者：

Moser, J. ^{[1
]}

Barreiro, A.

Bachtold, A.

机构：

[1] Univ Autonoma Barcelona, CIN2, E-08193 Bellaterra, Spain

[2] Univ Autonoma Barcelona, CNM, CSIC, E-08193 Bellaterra, Spain

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 16期

关键词：

D O I：

10.1063/1.2789673

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple yet highly reproducible method to suppress contamination of graphene at low temperature inside the cryostat is presented. The method consists of applying a current of several milliamperes through the graphene device, which is here typically a few microns wide. This ultrahigh current density is shown to remove contamination adsorbed on the surface. This method is well suited for quantum electron transport studies of undoped graphene devices, and its utility is demonstrated here by measuring the anomalous quantum Hall effect. (C) 2007 American Institute of Physics.

引用

页数：3

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