InGaP/GaAs HBT power amplifier with CMRC structure

被引：5

作者：

Poek, CK ^{[1
]}

Yan, BP ^{[1
]}

Yang, ES ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2005年 / 46卷 / 01期

关键词：

ACLR; Compact microstrip resonant cell (CMRC); HBT power amplifier; PAE;

D O I：

10.1002/mop.20908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WCDMA user equipment, specifically. band-l-power class-2 application. The HBT power amplifier demonstrates maximum output power P-out of 29.4 dBm and power-added efficiency (PAE) of 48% at a frequency of 1.95 GH(z). When operated according to the WCDMA standard. it achieves P-out of 27 dBm and PAE of 32.4%. The adjacent channel leakage power ratio (ACLR) is -33 dBc. A compact microstrip resonant cell (CMRC) circuit is implemented on the HBT amplifier in order to further improve the PAE, ACLR, and IM3 performances. This results in improvements of 8 dB and 6% for the ACLR and PAE, respectively. (c) 2005 Wiley Periodicals, Inc.

引用

页码：84 / 88

页数：5

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