High efficiency, low offset voltage InGaP/GaAs power-heterostructure-emitter bipolar transistors with advanced thermal management

被引：4

作者：

Yan, BP ^{[1
]}

Yang, ES

Yang, YF

Wang, XQ

Hsu, CC

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

[2] Global Commun Semicond Inc, Torrance, CA 90505 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 10期

关键词：

current gain; HEBT; InGaP/GaAs HBT; power performance; temperature dependence;

D O I：

10.1109/TED.2003.816551

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors (HEBTs) have been demonstrated. The large signal performance of the HEBTs is characterized. Output power of 0.25 W with power added efficiency (PAE) of 63.5% at 1.9 GHz has been achieved from a 26-finger HEBT with total emitter area of 873.6 mum(2). Output power of 1.0 W with PAE of 63% has been obtained from the composition of four above-mentioned power cells at the optimum conditions of impedance matching. The thermal performance of HEBT is presented and the results show better thermal management than conventional HBT. The experimental results demonstrate good power performance and capability of HEBTs.

引用

页码：2154 / 2158

页数：5

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