InGaP/GaAs power heterostructure-emitter bipolar transistor

被引：2

作者：

Yan, BP ^{[1
]}

Yang, ES

Yang, YF

Wang, XQ

Hsu, CC

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

[2] Global Commun Semicond Inc, Torrance, CA 90505 USA

[3] Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 20期

关键词：

D O I：

10.1049/el:20010840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first microwave large-signal power results measured from InGaP/GaAs heterostructure-emitter bipolar transistors (HEBT) are reported. A continuous wave output power of 0.25 W with power added efficiency of 63.5% at 1.9 GHz has been achieved from a 26-finger HEBT with total emitter area of 873.6 mum(2). The experimental results demonstrate excellent power performance and capability of HEBTs.

引用

页码：1262 / 1264

页数：3

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