Temperature dependence of current gain of GaInP/GaAs heterojunction and heterostructure-emitter bipolar transistors

The temperature effect on current gain is presented for GaInP/GaAs heterojunction and heterostructure-emitter bipolar transistors (HBT's and HEBT's), Experimental results showed that the current gain of the HEBT increases with the increase of temperature in the temperature range of 25-125 degrees C and decreases slightly at temperatures above 150 degrees C, The smaller the collector current, the larger is the positive differential temperature coefficient. At high current levels, the current gain dependence on temperature is significantly reduced. On the other hand, a large negative coefficient is observed in the HBT in all current range. This finding indicates that the HEBT is a better candidate than the HBT for power devices.