TEMPERATURE DEPENDENCES OF CURRENT GAINS IN GAINP/GAAS AND ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：61

作者：

LIU, W ^{[1
]}

FAN, SK ^{[1
]}

HENDERSON, T ^{[1
]}

DAVITO, D ^{[1
]}

机构：

[1] EPITRON CORP,PHOENIX,AZ 85027

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 07期

关键词：

D O I：

10.1109/16.216446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependences of current gain are investigated for both GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors (HBT's). Measured results indicate that for GaInP/GaAs HBT's the current gain at collector current densities > 0.1 A/cm2 remains nearly constant, independent of the substrate temperature. In contrast, the current gain decreases monotonically with temperature for AlGaAs/GaAs HBT's. These current gain characteristics are examined and the origin of the difference is attributed to the difference of the valence-band discontinuities in the base-emitter heterojunctions of the two HBT's.

引用

页码：1351 / 1353

页数：3

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