DIODE IDEALITY FACTOR FOR SURFACE RECOMBINATION CURRENT IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：80

作者：

LIU, W ^{[1
]}

HARRIS, JS ^{[1
]}

机构：

[1] STANFORD UNIV,SOLID STATE LAB,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 12期

关键词：

D O I：

10.1109/16.168749

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

N-p-n AlGaAs/GaAs heterojunction bipolar transistors of various emitter areas have been fabricated to examine the diode ideality factor for surface recombination. These transistors are fabricated with and without exposed extrinsic base surfaces. Comparison of the measured results indicates that the base surface recombination current increases exponentially with the base-emitter voltage with an ideality factor which is closer to 1 than 2(1 < n < 1.33). This finding agrees with a published theoretical analysis of base surface recombination in HBT's. This study will also be compared with other experimental work.

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页码：2726 / 2732

页数：7

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