EMITTER SIZE EFFECT ON CURRENT GAIN IN FULLY SELF-ALIGNED ALGAAS/GAAS HBTS WITH ALGAAS SURFACE PASSIVATION LAYER

被引：86

作者：

HAYAMA, N

HONJO, K

机构：

[1] Microelectronics Research Laboratories, NEC Corporation, Kawasaki 213, 1-1, Miyazaki, 4-chome, Miyamae-ku

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 09期

关键词：

D O I：

10.1109/55.62965

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current gain dependence on emitter-base junction size for fully self-aligned AlGaAs / GaAs heterojunction bipolar transistors (HBT’s) has been investigated, in which the extrinsic base layer is passivated by a partially thinned AlGaAs emitter layer. The current gain is improved due to surface recombination current reduction by a factor of 1 / 40 in the extrinsic base region. It has also been found that the base current is dominated by an excess leakage current in the proton-implanted isolation region. © 1990 IEEE

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页码：388 / 390

页数：3

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