A 20-GHZ FREQUENCY-DIVIDER IMPLEMENTED WITH HETEROJUNCTION BIPOLAR-TRANSISTORS

[1] Asbeck P. M., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P133

[2] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 303 - 305

[3] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969

[4] HIGH-SPEED FREQUENCY-DIVIDERS USING SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) : 194 - 196

[5] GAAS/IN0.08GA0.92AS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A LATTICE-MISMATCHED BASE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (05): : L421 - L424

[6] Jensen J. F., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P476

[7] SHIRBER JE, 1985, APPL PHYS LETT, V46, P187

[8] ALGAAS INGAAS GAAS STRAINED-LAYER HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY [J]. ELECTRONICS LETTERS, 1986, 22 (08) : 419 - 421

[9] Wang K. C., 1986, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest (Cat. No.86CH2372-1), P159

[1] Asbeck P. M., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P133

[2] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED USING A SELF-ALIGNED DUAL-LIFT-OFF PROCESS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 303 - 305

[3] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969

[4] HIGH-SPEED FREQUENCY-DIVIDERS USING SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) : 194 - 196

[5] GAAS/IN0.08GA0.92AS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A LATTICE-MISMATCHED BASE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (05): : L421 - L424

[6] Jensen J. F., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P476

[7] SHIRBER JE, 1985, APPL PHYS LETT, V46, P187

[8] ALGAAS INGAAS GAAS STRAINED-LAYER HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY [J]. ELECTRONICS LETTERS, 1986, 22 (08) : 419 - 421

[9] Wang K. C., 1986, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest (Cat. No.86CH2372-1), P159