EFFECT OF BULK RECOMBINATION CURRENT ON THE CURRENT GAIN OF GAAS/A1GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS IN GAAS-ON-SI

被引：12

作者：

MA, T

LEE, WS

ADKISSON, JW

HARRIS, JS

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 10期

关键词：

D O I：

10.1109/55.43099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：458 / 460

页数：3

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