ELECTRICAL-ACTIVITY OF DEFECTS IN MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI AND ITS REDUCTION BY RAPID THERMAL ANNEALING

被引：38

作者：

CHAND, N

FISCHER, R

SERGENT, AM

LANG, DV

PEARTON, SJ

CHO, AY

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 13期

关键词：

D O I：

10.1063/1.98815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1013 / 1015

页数：3

共 13 条

[1] GAAS AVALANCHE PHOTODIODES AND THE EFFECT OF RAPID THERMAL ANNEALING ON CRYSTALLINE QUALITY OF GAAS GROWN ON SI BY MOLECULAR-BEAM EPITAXY [J].

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CHO, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03) :822-826

[2] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J].

CHAND, N ;

PEOPLE, R ;

BAIOCCHI, FA ;

WECHT, KW ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :815-817

[3] STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

LANG, DV ;

CHO, AY ;

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ILEGEMS, M ;

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[4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[5] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].

LEE, JW ;

SHICHIJO, H ;

TSAI, HL ;

MATYI, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :31-33

[6]

LEE JW, 1986, 15TH INT S GAAS REL

[7]

MARTIN GM, 1986, DEEP CTR SEMICONDUCT, P399

[8] PASSIVATION OF SI DONORS AND DX CENTERS IN ALGAAS BY HYDROGEN PLASMA EXPOSURE [J].

NABITY, JC ;

STAVOLA, M ;

LOPATA, J ;

DAUTREMONTSMITH, WC ;

TU, CW ;

PEARTON, SJ .

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[9]

PEARTON SJ, 1987 P MAT RES SOC S

[10]

READ WT, 1953, DISLOCATIONS CRYSTAL, P7

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