GAAS AVALANCHE PHOTODIODES AND THE EFFECT OF RAPID THERMAL ANNEALING ON CRYSTALLINE QUALITY OF GAAS GROWN ON SI BY MOLECULAR-BEAM EPITAXY

被引：32

作者：

CHAND, N

ALLAM, J

GIBSON, JM

CAPASSO, F

BELTRAM, F

MACRANDER, AT

HUTCHINSON, AL

HOPKINS, LC

BETHEA, CG

LEVINE, BF

CHO, Y

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583761

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：822 / 826

页数：5

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