ION-IMPLANTATION AND ANNEALING PROPERTIES OF MOLECULAR-BEAM EPITAXY GROWN GAAS-ON-SI

被引：2

作者：

LEE, JW ^{[1
]}

TRAN, LT ^{[1
]}

TSAI, HL ^{[1
]}

SHICHIJO, H ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583762

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：827 / 830

页数：4

共 10 条

[1]

CHOI HK, 1986, IEEE ELECTRON DEVICE, V7, P271

[2] MONOLITHIC INTEGRATION OF GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND N-METAL-OXIDE-SEMICONDUCTOR SILICON CIRCUITS [J].

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DETRY, J ;

BLACKSTONE, SC .

APPLIED PHYSICS LETTERS, 1985, 47 (09) :983-985

[3] MONOLITHIC INTEGRATION OF GAAS LIGHT-EMITTING-DIODES AND SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

GHOSH, RN ;

GRIFFING, B ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :370-371

[4] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].

LEE, JW ;

SHICHIJO, H ;

TSAI, HL ;

MATYI, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :31-33

[5]

LEE JW, 1986, MATER RES SOC S P, V67, P28

[6]

LEE JW, 1986, 13TH INT S GAAS REL

[7]

MCLEVIGE WV, 1985, TECH DIG, P203

[8] FABRICATION OF GAAS-MESFET RING OSCILLATOR ON MOCVD GROWN GAAS/SI(100) SUBSTRATE [J].

NONAKA, T ;

AKIYAMA, M ;

KAWARADA, Y ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (12) :L919-L921

[9]

SHICHIJO H, 1986, 13TH INT S GAAS REL

[10]

YUAN HT, 1984, TECH DIG, P42

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