MONOLITHIC INTEGRATION OF GAAS LIGHT-EMITTING-DIODES AND SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：29

作者：

GHOSH, RN

GRIFFING, B

BALLANTYNE, JM

机构：

[1] Cornell Univ, Ithaca, NY, USA, Cornell Univ, Ithaca, NY, USA

来源：

关键词：

D O I：

10.1063/1.96555

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：370 / 371

页数：2

共 4 条

[1] GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES [J].

FLETCHER, RM ;

WAGNER, DK ;

BALLANTYNE, JM .

[2]

FLETCHER RM, 1985, THESIS CORNELL U

[3] GAAS LIGHT-EMITTING-DIODES FABRICATED ON SIO2/SI WAFERS [J].

SHINODA, Y ;

NISHIOKA, T ;

OHMACHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L450-L451

WINDHORN, TH ;

METZE, GM ;

TSAUR, BY ;

FAN, JCC .