A HIGH-GAIN GAAS/ALGAAS N-P-N HETEROJUNCTION BIPOLAR-TRANSISTOR ON (100) SI GROWN BY MOLECULAR-BEAM EPITAXY

被引：17

作者：

WON, T

LITTON, CW

MORKOC, H

YARIV, A

机构：

[1] USAF,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

[2] CALTECH,PASADENA,CA 91125

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 08期

关键词：

D O I：

10.1109/55.759

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：405 / 407

页数：3

共 12 条

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FISCHER, R ;

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LONGERBONE, M ;

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[6] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

FISCHER, R ;

CHAND, N ;

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MORKOC, H ;

ERICKSON, LP ;

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APPLIED PHYSICS LETTERS, 1985, 47 (04) :397-399

[7] DRAMATIC ENHANCEMENT IN THE GAIN OF ALGAAS/GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS BY SURFACE PASSIVATION [J].

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SANDROFF, CJ ;

SKROMME, BJ ;

BISCHOFF, JC ;

BHAT, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) :2370-2370

[8]

SINGER PH, 1987, SEMICOND INT, V5, P71

[9] A FULLY PLANAR P-N-P HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

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HADEN, JM ;

DZURKO, KM ;

STANCHINA, WE ;

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DANNER, AD ;

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IEEE ELECTRON DEVICE LETTERS, 1988, 9 (03) :116-118

[10] GAAS/ALGAAS HETEROJUNCTION EMITTER-DOWN BIPOLAR-TRANSISTORS FABRICATED ON GAAS-ON-SI SUBSTRATE [J].

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IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) :50-52

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