INFLUENCE OF BUFFER LAYER THICKNESS ON DC PERFORMANCE OF GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON SILICON SUBSTRATES

被引：10

作者：

MA, T

UEDA, D

LEE, WS

ADKISSON, J

HARRIS, JS

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 12期

关键词：

D O I：

10.1109/55.20427

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：657 / 659

页数：3

共 7 条

[1] MINORITY-CARRIER PROPERTIES OF GAAS ON SILICON [J].

AHRENKIEL, RK ;

ALJASSIM, MM ;

DUNLAVY, DJ ;

JONES, KM ;

VERNON, SM ;

TOBIN, SP ;

HAVEN, VE .

APPLIED PHYSICS LETTERS, 1988, 53 (03) :222-224

[2] LOW-THRESHOLD GAAS/ALGAAS LASERS GROWN ON SI BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

CHOI, HK ;

LEE, JW ;

SALERNO, JP ;

CONNORS, MK ;

TSAUR, BY ;

FAN, JCC .

APPLIED PHYSICS LETTERS, 1988, 52 (14) :1114-1115

[3] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J].

FISCHER, R ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

KOPP, W ;

MORKOC, H ;

LITTON, CW .

ELECTRONICS LETTERS, 1984, 20 (22) :945-947

[4] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

METZE, GM ;

CHOI, HK ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1107-1109

[5] THICKNESS DEPENDENCE OF MATERIAL QUALITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

PEARTON, SJ ;

ABERNATHY, CR ;

CARUSO, R ;

VERNON, SM ;

SHORT, KT ;

BROWN, JM ;

CHU, SNG ;

STAVOLA, M ;

HAVEN, VE .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) :775-783

[6] GAAS/ALGAAS HETEROJUNCTION EMITTER-DOWN BIPOLAR-TRANSISTORS FABRICATED ON GAAS-ON-SI SUBSTRATE [J].

TRAN, LT ;

LEE, JW ;

SHICHIJO, H ;

YUAN, HT .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) :50-52

[7] A HIGH-GAIN GAAS/ALGAAS N-P-N HETEROJUNCTION BIPOLAR-TRANSISTOR ON (100) SI GROWN BY MOLECULAR-BEAM EPITAXY [J].

WON, T ;

LITTON, CW ;

MORKOC, H ;

YARIV, A .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) :405-407

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