LOW-THRESHOLD GAAS/ALGAAS LASERS GROWN ON SI BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引:13
作者
CHOI, HK
LEE, JW
SALERNO, JP
CONNORS, MK
TSAUR, BY
FAN, JCC
机构
关键词
D O I
10.1063/1.99178
中图分类号
O59 [应用物理学];
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页码:1114 / 1115
页数:2
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  • [1] CONTINUOUS-WAVE OPERATION OF EXTREMELY LOW-THRESHOLD GAAS/ALGAAS BROAD-AREA INJECTION-LASERS ON (100) SI SUBSTRATES AT ROOM-TEMPERATURE
    CHEN, HZ
    GHAFFARI, A
    WANG, H
    MORKOC, H
    YARIV, A
    [J]. OPTICS LETTERS, 1987, 12 (10) : 812 - 813
  • [2] MONOLITHIC INTEGRATION OF GAAS/ALGAAS DOUBLE-HETEROSTRUCTURE LEDS AND SI MOSFETS
    CHOI, HK
    TURNER, GW
    WINDHORN, TH
    TSAUR, BY
    [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 500 - 502
  • [3] COOPERMAN SS, UNPUB
  • [4] STABILITY OF 300-K CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL LASERS GROWN ON SI
    DEPPE, DG
    NAM, DW
    HOLONYAK, N
    HSIEH, KC
    MATYI, RJ
    SHICHIJO, H
    EPLER, JE
    CHUNG, HF
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1271 - 1273
  • [5] ROOM-TEMPERATURE CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN ON SI
    DEPPE, DG
    HOLONYAK, N
    NAM, DW
    HSIEH, KC
    JACKSON, GS
    MATYI, RJ
    SHICHIJO, H
    EPLER, JE
    CHUNG, HF
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (09) : 637 - 639
  • [6] SALERNO JP, 1987, SPR MAT RES SOC M AN
  • [7] LOW-THRESHOLD ALGAAS/GAAS MQW LASER DIODE FABRICATED ON SI SUBSTRATES BY MOCVD
    SHIRAISHI, H
    YAMADA, R
    MATSUI, N
    UMENO, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (06): : L1012 - L1013
  • [8] TSAUR BY, 1982, 16TH P IEEE PHOT SPE, P1143
  • [9] ALGAAS DOUBLE-HETEROSTRUCTURE DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE
    WINDHORN, TH
    METZE, GM
    TSAUR, BY
    FAN, JCC
    [J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 309 - 311