THICKNESS DEPENDENCE OF MATERIAL QUALITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：37

作者：

PEARTON, SJ ^{[1
]}

ABERNATHY, CR ^{[1
]}

CARUSO, R ^{[1
]}

VERNON, SM ^{[1
]}

SHORT, KT ^{[1
]}

BROWN, JM ^{[1
]}

CHU, SNG ^{[1
]}

STAVOLA, M ^{[1
]}

HAVEN, VE ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.341141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：775 / 783

页数：9

相关论文

共 30 条

[1] AKIYAMA M, 1986, P MATER RES SOC, V67, P53
[2] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON
BIEGELSEN, DK
PONCE, FA
SMITH, AJ
TRAMONTANA, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1856 - 1859
[3] BROWN JP, UNPUB
[4] ION-IMPLANTATION AND ACTIVATION BEHAVIOR OF SI IN MBE-GROWN GAAS ON SI SUBSTRATES FOR GAAS-MESFETS
CHAND, N
REN, F
PEARTON, SJ
SHAH, NJ
CHO, AY
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) : 185 - 187
[5] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING
CHAND, N
PEOPLE, R
BAIOCCHI, FA
WECHT, KW
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817
[6] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES
CHOI, C
OTSUKA, N
MUNNS, G
HOUDRE, R
MORKOC, H
ZHANG, SL
LEVI, D
KLEIN, MV
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 992 - 994
[7] CUMMINGS KD, 1986, J APPL PHYS, V60, P1680
[8] PHOTOLUMINESCENCE AND X-RAY-PROPERTIES OF HETEROEPITAXIAL GALLIUM-ARSENIDE ON SILICON
DUNCAN, WM
LEE, JW
MATYI, RJ
LIU, HY
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) : 2161 - 2164
[9] ION-IMPLANTATION IN III-V COMPOUNDS
EISEN, FH
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 99 - 115
[10] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES
FISCHER, R
MORKOC, H
NEUMANN, DA
ZABEL, H
CHOI, C
OTSUKA, N
LONGERBONE, M
ERICKSON, LP
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1640 - 1647