SUB-MICRON SCALING OF ALGAAS/GAAS SELF-ALIGNED THIN EMITTER HETEROJUNCTION BIPOLAR-TRANSISTORS (SATE-HBT) WITH CURRENT GAIN INDEPENDENT OF EMITTER AREA

被引：28

作者：

MALIK, RJ ^{[1
]}

LUNARDI, LM ^{[1
]}

RYAN, RW ^{[1
]}

SHUNK, SC ^{[1
]}

FEUER, MD ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 17期

关键词：

D O I：

10.1049/el:19890788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1175 / 1177

页数：3

共 6 条

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[2]

LIU HH, 1985, APPL PHYS LETT, V47, P839

[3] EMITTER-BASE JUNCTION SIZE EFFECT ON CURRENT GAIN HFE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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NAGATA, K ;

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (08) :L596-L598

[4] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION [J].

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NOTTENBURG, RN ;

BISCHOFF, JC ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :33-35

[5] TRANSPORT AND RELATED PROPERTIES OF (GA, AL) AS/GAAS DOUBLE HETEROSTRUCTURE BIPOLAR JUNCTION TRANSISTORS [J].

TIWARI, S ;

WRIGHT, SL ;

KLEINSASSER, AW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :185-198

[6] 22 GHZ 1/4 FREQUENCY-DIVIDER USING ALGAAS/GAAS HBTS [J].

YAMAUCHI, Y ;

NAGATA, K ;

NAKAJIMA, O ;

ITO, H ;

NITTONO, T ;

ISHIBASHI, T .

ELECTRONICS LETTERS, 1987, 23 (17) :881-882

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