22 GHZ 1/4 FREQUENCY-DIVIDER USING ALGAAS/GAAS HBTS

[1] AIGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CIRCUITS WITH IMPROVED HIGH-SPEED PERFORMANCE [J]. ELECTRONICS LETTERS, 1986, 22 (22) : 1173 - 1174

[2] HIGH-SPEED FREQUENCY-DIVIDERS USING SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) : 194 - 196

[3] JENSEN JF, 1986, DEC IEDM, P476

[4] IMPROVED ALGAAS/GAAS HBT PERFORMANCE BY INGAAS EMITTER CAP LAYER [J]. ELECTRONICS LETTERS, 1987, 23 (11) : 566 - 568

[5] Nakajima O., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P266

[6] SAKAI T, 1985, DEC P IEDM WASH, P18

[7] ELECTRON VELOCITY OVERSHOOT IN THE COLLECTOR DEPLETION LAYER OF ALGAAS/GAAS HBTS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 655 - 657

[8] YAMAUCHI Y, 1986, T IECE JPN E, V67, P286

[1] AIGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CIRCUITS WITH IMPROVED HIGH-SPEED PERFORMANCE [J]. ELECTRONICS LETTERS, 1986, 22 (22) : 1173 - 1174

[2] HIGH-SPEED FREQUENCY-DIVIDERS USING SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) : 194 - 196

[3] JENSEN JF, 1986, DEC IEDM, P476

[4] IMPROVED ALGAAS/GAAS HBT PERFORMANCE BY INGAAS EMITTER CAP LAYER [J]. ELECTRONICS LETTERS, 1987, 23 (11) : 566 - 568

[5] Nakajima O., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P266

[6] SAKAI T, 1985, DEC P IEDM WASH, P18

[7] ELECTRON VELOCITY OVERSHOOT IN THE COLLECTOR DEPLETION LAYER OF ALGAAS/GAAS HBTS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 655 - 657

[8] YAMAUCHI Y, 1986, T IECE JPN E, V67, P286