IMPROVED ALGAAS/GAAS HBT PERFORMANCE BY INGAAS EMITTER CAP LAYER

被引：4

作者：

NAGATA, K

NAKAJIMA, O

NITTONO, T

ITO, H

ISHIBASHI, T

机构：

[1] NTT, Atsugi, Jpn, NTT, Atsugi, Jpn

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 11期

关键词：

D O I：

10.1049/el:19870406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TRANSISTORS, BIPOLAR

引用

页码：566 / 568

页数：3

共 7 条

[1] GAAS/(GAAL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS USING A SELF-ALIGNED SUBSTITUTIONAL EMITTER PROCESS [J].

CHANG, MF ;

ASBECK, PM ;

MILLER, DL ;

WANG, KC .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) :8-10

[2]

ITO H, 1986, I PHYS C SER, V79, P607

[3] SELF-ALIGNED ALGAAS/GAAS HBT WITH INGAAS EMITTER CAP LAYER [J].

NAGATA, K ;

NAKAJIMA, O ;

NITTONO, T ;

ITO, H ;

ISHIBASHI, T .

ELECTRONICS LETTERS, 1987, 23 (02) :64-65

[4]

NAGATA K, 1986, I PHYS C SER, V79, P589

[5]

Nakajima O., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P266

[6] AN (AL,GA)AS/GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR WITH NONALLOYED GRADED-GAP OHMIC CONTACTS TO THE BASE AND EMITTER [J].

RAO, MA ;

CAINE, EJ ;

LONG, SI ;

KROEMER, H .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) :30-32

[7] EQUIVALENT-CIRCUIT AND ECL RING OSCILLATORS OF GRADED-BANDGAP BASE GAAS/ALGAAS HBTS [J].

YAMAUCHI, Y ;

ISHIBASHI, T .

ELECTRONICS LETTERS, 1986, 22 (01) :18-20

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