IDEALITY FACTOR OF EXTRINSIC BASE SURFACE RECOMBINATION CURRENT IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：5

作者：

LIU, W ^{[1
]}

机构：

[1] STANFORD UNIV,SOLID STATE LAB,STANFORD,CA 94305

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 04期

关键词：

BIPOLAR DEVICES; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920237

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Various structures of Npn AlGaAs/GaAs heterojunction bipolar transistor have been fabricated to examine the ideality factor for extrinsic base surface recombination. Comparison of the measured results indicates that the base surface recombination current increases exponentially with the base-emitter voltage with an ideality factor of 1, rather than 2. This finding agrees with a published theoretical analysis.

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页码：379 / 380

页数：2

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