COMPARISON OF THE EFFECTS OF SURFACE PASSIVATION AND BASE QUASI-ELECTRIC FIELDS ON THE CURRENT GAIN OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON GAAS AND SI-SUBSTRATES

被引：18

作者：

LIU, W ^{[1
]}

COSTA, D ^{[1
]}

HARRIS, J ^{[1
]}

机构：

[1] STANFORD UNIV,SOLID STATE LAB,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 06期

关键词：

D O I：

10.1063/1.105367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of extrinsic base surface passivation and base quasi-electric field on the current gain of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) grown upon GaAs and Si substrates are compared. The degree of improvement in the current gain realized by either the base field and/or passivation depends strongly on which substrate is used. It is also shown that base-emitter junction space-charge recombination current is a significant base current component for all devices, even at high current levels. The current gain for passivated devices with a base field of 1.25 X 10(4) V/cm achieves a maximum value of 1100 for a HBT-on-GaAs, and 100 for a HBT-on-Si.

引用

页码：691 / 693

页数：3

共 7 条

[1] EMITTER SIZE EFFECT ON CURRENT GAIN IN FULLY SELF-ALIGNED ALGAAS/GAAS HBTS WITH ALGAAS SURFACE PASSIVATION LAYER [J].