MATERIAL PROPERTIES OF P-TYPE GAAS AT LARGE DOPINGS

被引:101
作者
TIWARI, S [1 ]
WRIGHT, SL [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.102745
中图分类号
O59 [应用物理学];
学科分类号
摘要
We summarize the room-temperature minority-carrier mobility, minority-carrier lifetime, and effective band-gap shrinkage for p-type GaAs at large dopings, as determined from measurements on heterostructure bipolar transistors and published literature. The minority-carrier mobilities are significantly smaller than the majority-carrier mobilities, the lifetime data show a change in dependence on doping at 1×1019 cm-3, and the effective band-gap shrinkage is ≊5% at 1×1019 cm-3. The fits to electrical parameters described here should be of interest in modeling of minority-carrier devices.
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页码:563 / 565
页数:3
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