ELECTRON-MOBILITY IN P-GAAS BY TIME OF FLIGHT

被引：38

作者：

AHRENKIEL, RK ^{[1
]}

DUNLAVY, DJ ^{[1
]}

GREENBERG, D ^{[1
]}

SCHLUPMANN, J ^{[1
]}

HAMAKER, HC ^{[1
]}

MACMILLAN, HF ^{[1
]}

机构：

[1] VARIAN RES CTR,PALO ALTO,CA 94303

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 10期

关键词：

D O I：

10.1063/1.98864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：776 / 778

页数：3

共 20 条

[1] TIME-OF-FLIGHT STUDIES OF MINORITY-CARRIER DIFFUSION IN ALXGA1-XAS HOMOJUNCTIONS
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[2] INFLUENCE OF JUNCTIONS ON PHOTOLUMINESCENCE DECAY IN THIN-FILM DEVICES
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[3] EFFECTS OF PRELAYERS ON MINORITY-CARRIER LIFETIME IN GAAS/ALGAAS DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1227 - 1229
[4] SCREENING EFFECTS IN POLAR SEMICONDUCTORS
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 130 - 135
[5] MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY
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[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) : 827 - 831
[6] HOPFEL RA, 1986, APPL PHYS LETT, V48, P148, DOI 10.1063/1.96979
[7] THE THEORY OF ELECTRONIC CONDUCTION IN POLAR SEMI-CONDUCTORS
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SONDHEIMER, EH
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1953, 219 (1136): : 53 - 74
[8] IONAOU DE, 1985, IEEE T ELECTRON DEVI, V32, P847
[9] ON THE ESTIMATION OF BASE TRANSIT-TIME IN ALGAAS/GAAS BIPOLAR-TRANSISTORS
MAZIAR, CM
LUNDSTROM, MS
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (03) : 90 - 92
[10] A THEORY OF THE EFFECTS OF CARRIER-CARRIER SCATTERING ON MOBILITY IN SEMICONDUCTORS
MCLEAN, TP
PAIGE, EGS
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) : 220 - 236

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