EXPERIMENTAL COMPARISON OF BASE RECOMBINATION CURRENTS IN ABRUPT AND GRADED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：24

作者：

LIU, W ^{[1
]}

机构：

[1] STANFORD UNIV,SOLID STATE LAB,STANFORD,CA 94305

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 23期

关键词：

TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19911310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The relative importance of the base bulk recombination current and the base-emitter junction space charge recombination current is examined for AlGaAs/GaAs HBTs with different grading schemes in the base-emitter junction. Experimental results demonstrate that, in abrupt HBTs, the base bulk recombination current is larger, and the base current increases with the base-emitter bias with an ideality factor of approximately 1. In contrast, in graded HBTs, the space charge recombination current dominates and the base current ideality factor is approximately 2. These experimental results agree well with a published theoretical calculation.

引用

页码：2115 / 2116

页数：2

共 8 条

[1] OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J].