THE EFFECT OF BASE GRADING ON THE GAIN AND HIGH-FREQUENCY PERFORMANCE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：39

作者：

HO, SCM

PULFREY, DL

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期

关键词：

D O I：

10.1109/16.40897

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2173 / 2182

页数：10

共 35 条

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