AN INVESTIGATION OF THE EFFECT OF GRADED LAYERS AND TUNNELING ON THE PERFORMANCE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：154

作者：

GRINBERG, AA

SHUR, MS

FISCHER, RJ

MORKOC, H

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 12期

关键词：

D O I：

10.1109/T-ED.1984.21784

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1758 / 1765

页数：8

相关论文

共 15 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[2] GAAIAS-GAAS BALLISTIC HETEROJUNCTION BIPOLAR-TRANSISTOR
ANKRI, D
EASTMAN, LF
[J]. ELECTRONICS LETTERS, 1982, 18 (17) : 750 - 751
[3] DIFFUSED EPITAXIAL GAALAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FOR HIGH-FREQUENCY OPERATION
ANKRI, D
SCAVENNEC, A
BESOMBES, C
COURBET, C
HELIOT, F
RIOU, J
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (09) : 816 - 818
[4] [Anonymous], 1978, HETEROSTRUCTURE LASE
[5] OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS
HAYES, JR
CAPASSO, F
MALIK, RJ
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 949 - 951
[6] (GAAL)AS-GAAS HETEROJUNCTION PHOTOTRANSISTORS WITH HIGH-CURRENT GAIN
KONAGAI, M
KATSUKAWA, K
TAKAHASHI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4389 - 4394
[7] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS
KROEMER, H
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537
[8] HETEROSTRUCTURE BIPOLAR-TRANSISTORS - WHAT SHOULD WE BUILD
KROEMER, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 126 - 130
[9] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS
KROEMER, H
[J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25
[10] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS
PADOVANI, FA
STRATTON, R
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (07) : 695 - &