HETEROJUNCTION BIPOLAR-TRANSISTOR USING A (GA,IN)P EMITTER ON A GAAS BASE, GROWN BY MOLECULAR-BEAM EPITAXY

被引：107

作者：

MONDRY, MJ ^{[1
]}

KROEMER, H ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

关键词：

D O I：

10.1109/EDL.1985.26087

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：175 / 177

页数：3

共 17 条

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[2] Asbeck P. M., 1981, International Electron Devices Meeting, P629
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[7] GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH-FREQUENCY OPERATION
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[9] OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS
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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 949 - 951
[10] ITO H, 1984, 16TH INT C SOL STAT, P351