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AN ALGAAS/GAAS HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTOR

被引：35
作者：
WU, X
WANG, YQ
LUO, LF
YANG, ES
机构：
[1] Microelectronics Sciences Laboratories, Columbia University, New York
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 06期
关键词：
D O I：
10.1109/55.55275
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new configuration of bipolar transistor using an AlGaAs/GaAs heterostructure emitter for emitter minority-carrier confinement has been fabricated. The transistor shows a current gain of 28 at a base-to-emitter doping ratio of 10. Although the gain at low current level is to be improved, other characteristics are comparable to a conventional heterojunction transistor. © 1990 IEEE
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页码：264 / 266
页数：3
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