The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors

被引：70

作者：

Liu, W ^{[1
]}

Khatibzadeh, A ^{[1
]}

Sweder, J ^{[1
]}

Chau, HF ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DEF SYST ELECTR GRP,DALLAS,TX 75265

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 02期

关键词：

D O I：

10.1109/16.481724

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose the use of base-ballasting resistance to guarantee absolute thermal stability in AlGaAs/GaAs heterojunction bipolar transistors (HBT's). Base-ballasted HBT's are fabricated and the measured I-V, regression and S-factor characteristics are discussed. We present a numerical model which elucidates the reasons why the base-ballasting scheme is helpful to HBT's but is damaging to silicon bipolar transistors. We compare measured small-signal and large-signal performances of unballasted, emitter-ballasted, and base-ballasted HBT's.

引用

页码：245 / 251

页数：7

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