A SURVEY OF THERMAL-ELECTRIC FEEDBACK COEFFICIENTS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：11

作者：

LIU, W ^{[1
]}

YUKSEL, A ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 02期

关键词：

D O I：

10.1016/0038-1101(94)00116-W

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We measure the thermal-electric feedback coefficients of heterojunction bipolar transistors (HBTs) grown by various sources and designed with various epitaxial structures. These HBTs include Npn GalnP/GaAs, Npn graded AlGaAs/GaAs HBTs, Npn abrupt AlGaAs/GaAs and Pnp AlGaAs/GaAs HBTs. Despite the drastic difference in the HBTs under investigation, the measured thermal-electric feedback coefficients are not significantly different.

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页码：407 / 411

页数：5

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