THE USE OF TERTIARYBUTYLPHOSPHINE AND TERTIARYBUTYLARSINE FOR THE METALORGANIC MOLECULAR-BEAM EPITAXY OF THE IN0.53GA0.47AS/INP AND IN0.48GA0.52P/GAAS MATERIALS SYSTEMS

This paper describes a study on the use of thermally cracked tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBA) with elemental Ga and In sources for the metalorganic molecular beam epitaxy (MOMBE) growth of the In0.53Ga0.47As/InP and In048Ga0.52P/GaAs materials systems. Modulated beam mass spectroscopy was used to characterize the thermal decomposition of these Group-V metal alkyls. Results indicate that As2 and P2 are the dominant growth species produced when cracker temperatures greater than 700-degrees-C are used. These conditions result in high quality epitaxial layers with essentially zero oval defects (less than 1/cm2) despite the use of elemental Group-III sources. Results of doping and heterointerface studies indicate that these Group-V precursors are suitable replacements for hydride sources. Application of these precursors for device structure growth including heterojunction bipolar transistors (HBTs) and resonant tunneling diodes (RTDs) is also described.