CHARACTERIZATION OF INP GROWN BY OMVPE USING TRIMETHYLINDIUM AND TERTIARYBUTYLPHOSPHINE (TBP) AT LOW V/III RATIOS AND REDUCED TBP PARTIAL PRESSURES

被引：26

作者：

KELLERT, FG

WHELAN, JS

CHAN, KT

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 03期

关键词：

D O I：

10.1007/BF02657983

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：355 / 360

页数：6

共 14 条

[1] METAL ORGANIC VAPOR-PHASE EPITAXY OF INDIUM-PHOSPHIDE [J].

BASS, SJ ;

PICKERING, C ;

YOUNG, ML .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :68-75

[2] A STUDY OF RESIDUAL BACKGROUND DOPING IN HIGH-PURITY INDIUM-PHOSPHIDE GROWN BY ATMOSPHERIC-PRESSURE OMVPE [J].

BRIGGS, ATR ;

BUTLER, BR .

JOURNAL OF CRYSTAL GROWTH, 1987, 85 (03) :535-542

[3] CONCENTRATION-DEPENDENT ABSORPTION AND PHOTOLUMINESCENCE OF N-TYPE INP [J].

BUGAJSKI, M ;

LEWANDOWSKI, W .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :521-530

[4] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY GAINAS ON INP [J].

CAREY, KW .

APPLIED PHYSICS LETTERS, 1985, 46 (01) :89-91

[5] STRUCTURAL AND PHOTOLUMINESCENT PROPERTIES OF GAINAS QUANTUM-WELLS WITH INP BARRIERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

CAREY, KW ;

HULL, R ;

FOUQUET, JE ;

KELLERT, FG ;

TROTT, GR .

APPLIED PHYSICS LETTERS, 1987, 51 (12) :910-912

[6] USE OF TERTIARY-BUTYLPHOSPHINE FOR THE GROWTH OF INP AND GAAS1-XPX [J].

CHEN, CH ;

CAO, DS ;

STRINGFELLOW, GB .

JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (01) :67-73

[7] MOVPE GROWTH OF INP USING ISOBUTYLPHOSPHINE AND TERT-BUTYLPHOSPHINE [J].

CHEN, CH ;

LARSEN, CA ;

STRINGFELLOW, GB ;

BROWN, DW ;

ROBERTSON, AJ .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :11-18

[8]

CHEN CH, 1987, I PHYS C SER, V83, P75

[9]

KURTZ SR, 1988, 30TH EL MAT C BOULD

[10]

LARSEN CA, 1986, APPL PHYS LETT, V48, P153

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