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CONCENTRATION-DEPENDENT ABSORPTION AND PHOTOLUMINESCENCE OF N-TYPE INP
被引:190
作者
:
BUGAJSKI, M
论文数:
0
引用数:
0
h-index:
0
BUGAJSKI, M
LEWANDOWSKI, W
论文数:
0
引用数:
0
h-index:
0
LEWANDOWSKI, W
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1985年
/ 57卷
/ 02期
关键词
:
D O I
:
10.1063/1.334786
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:521 / 530
页数:10
相关论文
共 24 条
[1]
DOUBLE DOPED LOW ETCH PIT DENSITY INP WITH REDUCED OPTICAL-ABSORPTION
BALLMAN, AA
论文数:
0
引用数:
0
h-index:
0
BALLMAN, AA
GLASS, AM
论文数:
0
引用数:
0
h-index:
0
GLASS, AM
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
NAHORY, RE
BROWN, H
论文数:
0
引用数:
0
h-index:
0
BROWN, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1983,
62
(01)
: 198
-
202
[2]
LOW-TEMPERATURE PHOTO-LUMINESCENCE OF N-TYPE GAINASP LAYERS GROWN ON INP BY LIQUID-PHASE EPITAXY
BEAUMONT, B
论文数:
0
引用数:
0
h-index:
0
BEAUMONT, B
NATAF, G
论文数:
0
引用数:
0
h-index:
0
NATAF, G
GUILLAUME, JC
论文数:
0
引用数:
0
h-index:
0
GUILLAUME, JC
VERIE, C
论文数:
0
引用数:
0
h-index:
0
VERIE, C
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(09)
: 5363
-
5368
[3]
BEBB HB, 1972, SEMICONDUCTOR SEMIME, V8, P288
[4]
TEMPERATURE-DEPENDENCE OF BAND-GAP AND COMPARISON WITH THRESHOLD FREQUENCY OF PURE GAAS LASERS
CAMASSEL, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,LAWRENCE BERKELEY LAB,INORG MAT RES DIV,BERKELEY,CA 94720
CAMASSEL, J
AUVERGNE, D
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,LAWRENCE BERKELEY LAB,INORG MAT RES DIV,BERKELEY,CA 94720
AUVERGNE, D
MATHIEU, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,LAWRENCE BERKELEY LAB,INORG MAT RES DIV,BERKELEY,CA 94720
MATHIEU, H
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(06)
: 2683
-
2689
[5]
Casey H.C. Jr, 1978, HETEROSTRUCTURE LA A, P135
[6]
CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
CASEY, HC
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
STERN, F
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(02)
: 631
-
643
[7]
RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS
CUSANO, DA
论文数:
0
引用数:
0
h-index:
0
CUSANO, DA
[J].
SOLID STATE COMMUNICATIONS,
1964,
2
(11)
: 353
-
358
[8]
DESHENG J, 1982, J APPL PHYS, V53, P999
[9]
GAIN-CURRENT RELATION FOR INO.72GAO.28ASO.6PO.4 LASERS
DUTTA, NK
论文数:
0
引用数:
0
h-index:
0
DUTTA, NK
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(01)
: 55
-
60
[10]
CALCULATED ABSORPTION, EMISSION, AND GAIN IN IN0.72GA0.28AS0.6P0.4
DUTTA, NK
论文数:
0
引用数:
0
h-index:
0
DUTTA, NK
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(12)
: 6095
-
6100
←
1
2
3
→
共 24 条
[1]
DOUBLE DOPED LOW ETCH PIT DENSITY INP WITH REDUCED OPTICAL-ABSORPTION
BALLMAN, AA
论文数:
0
引用数:
0
h-index:
0
BALLMAN, AA
GLASS, AM
论文数:
0
引用数:
0
h-index:
0
GLASS, AM
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
NAHORY, RE
BROWN, H
论文数:
0
引用数:
0
h-index:
0
BROWN, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1983,
62
(01)
: 198
-
202
[2]
LOW-TEMPERATURE PHOTO-LUMINESCENCE OF N-TYPE GAINASP LAYERS GROWN ON INP BY LIQUID-PHASE EPITAXY
BEAUMONT, B
论文数:
0
引用数:
0
h-index:
0
BEAUMONT, B
NATAF, G
论文数:
0
引用数:
0
h-index:
0
NATAF, G
GUILLAUME, JC
论文数:
0
引用数:
0
h-index:
0
GUILLAUME, JC
VERIE, C
论文数:
0
引用数:
0
h-index:
0
VERIE, C
[J].
JOURNAL OF APPLIED PHYSICS,
1983,
54
(09)
: 5363
-
5368
[3]
BEBB HB, 1972, SEMICONDUCTOR SEMIME, V8, P288
[4]
TEMPERATURE-DEPENDENCE OF BAND-GAP AND COMPARISON WITH THRESHOLD FREQUENCY OF PURE GAAS LASERS
CAMASSEL, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,LAWRENCE BERKELEY LAB,INORG MAT RES DIV,BERKELEY,CA 94720
CAMASSEL, J
AUVERGNE, D
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,LAWRENCE BERKELEY LAB,INORG MAT RES DIV,BERKELEY,CA 94720
AUVERGNE, D
MATHIEU, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF,LAWRENCE BERKELEY LAB,INORG MAT RES DIV,BERKELEY,CA 94720
MATHIEU, H
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(06)
: 2683
-
2689
[5]
Casey H.C. Jr, 1978, HETEROSTRUCTURE LA A, P135
[6]
CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
CASEY, HC
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
STERN, F
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(02)
: 631
-
643
[7]
RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS
CUSANO, DA
论文数:
0
引用数:
0
h-index:
0
CUSANO, DA
[J].
SOLID STATE COMMUNICATIONS,
1964,
2
(11)
: 353
-
358
[8]
DESHENG J, 1982, J APPL PHYS, V53, P999
[9]
GAIN-CURRENT RELATION FOR INO.72GAO.28ASO.6PO.4 LASERS
DUTTA, NK
论文数:
0
引用数:
0
h-index:
0
DUTTA, NK
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(01)
: 55
-
60
[10]
CALCULATED ABSORPTION, EMISSION, AND GAIN IN IN0.72GA0.28AS0.6P0.4
DUTTA, NK
论文数:
0
引用数:
0
h-index:
0
DUTTA, NK
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(12)
: 6095
-
6100
←
1
2
3
→