LOW-TEMPERATURE PHOTO-LUMINESCENCE OF N-TYPE GAINASP LAYERS GROWN ON INP BY LIQUID-PHASE EPITAXY

被引：20

作者：

BEAUMONT, B

NATAF, G

GUILLAUME, JC

VERIE, C

机构：

来源：

关键词：

D O I：

10.1063/1.332714

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5363 / 5368

页数：6

共 30 条

[1] ARNAUDOV BG, 1977, SOV PHYS SEMICOND+, V11, P1054
[2] BEAUMONT B, 1982, 16TH P IEEE PHOT SPE, P595
[3] LPE AND VPE IN1-XGAXASYP1-Y-INP - TRANSPORT-PROPERTIES, DEFECTS, AND DEVICE CONSIDERATIONS
BHATTACHARYA, PK
KU, JW
OWEN, SJT
OLSEN, GH
CHIAO, SH
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 150 - 161
[4] Bogatov A. P., 1975, Soviet Journal of Quantum Electronics, V4, DOI 10.1070/QE1975v004n10ABEH011746
[5] CYCLOTRON-RESONANCE IN N-TYPE IN1-XGAXASYP1-Y
BRENDECKE, H
STORMER, HL
NELSON, RJ
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (10) : 772 - 774
[6] CASEY HC, 1976, J APPL PHYS, V47, P613
[7] NEAR-BAND-GAP ABSORPTION AND PHOTO-LUMINESCENCE OF IN0.53GA0.47AS SEMICONDUCTOR ALLOY
CHEN, YS
KIM, OK
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7392 - 7396
[8] DESHENG J, 1982, J APPL PHYS, V53, P999
[9] DOLGINOV LM, 1976, SOVIET PHYSICS SEMIC, V9, P871
[10] UNEXPECTEDLY HIGH-ENERGY PHOTO-LUMINESCENCE OF HIGHLY SI DOPED GAAS GROWN BY MOVPE
DRUMINSKI, M
WOLF, HD
ZSCHAUER, KH
WITTMAACK, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 318 - 324