A STUDY OF RESIDUAL BACKGROUND DOPING IN HIGH-PURITY INDIUM-PHOSPHIDE GROWN BY ATMOSPHERIC-PRESSURE OMVPE

被引：12

作者：

BRIGGS, ATR

BUTLER, BR

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 85卷 / 03期

关键词：

D O I：

10.1016/0022-0248(87)90487-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：535 / 542

页数：8

共 17 条

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