GA1-XINXAS INP ABRUPT HETEROSTRUCTURES GROWN BY MOVPE AT ATMOSPHERIC-PRESSURE

High quality InP and Ga//1// minus //xIn//xAs layers have been grown on InP substrates using MOVPE growth at atmospheric pressure. Excellent material quality has been obtained using triethylindium and trimethylgallium sources (n equals 1. 7 10**1**4 cm** minus **3, mu equals 106,000 cm**2V** minus **1s** minus **1 at 77 K for InP and n equals 1-3 10**1**5 cm** minus **3, mu equals 75,000 cm**2V** minus **1s** minus **1 at 77 K for Ga//1// minus //xIn//xAs). The InP/Ga//1// minus //xIn//xAs interface width obtained is very small (10 A). The first PIN diodes grown by the process exhibit excellent characteristics.