THE EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF INP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：11

作者：

KASEMSET, D ^{[1
]}

HESS, KL ^{[1
]}

MOHAMMED, K ^{[1
]}

MERZ, JL ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,SANTA BARBARA,CA 93106

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 04期

关键词：

D O I：

10.1007/BF02653987

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：655 / 671

页数：17

共 12 条

[1] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE
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MANASEVIT, HM
HESS, KL
LOW, TS
STILLMAN, GE
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 10 - 23
[2] Duchemin J.-P., 1979, INST PHYS CONF SE, V45, P10
[3] DUPUIS RD, 1982, P SOC PHOTO-OPT INST, V323, P131, DOI 10.1117/12.934287
[4] AN INVESTIGATION OF THE DEEP LEVEL PHOTO-LUMINESCENCE SPECTRA OF INP(MN), INP(FE), AND OF UNDOPED INP
EAVES, L
SMITH, AW
SKOLNICK, MS
COCKAYNE, B
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4955 - 4963
[5] LIQUID-PHASE EPITAXY OF INP
HESS, K
STATH, N
BENZ, KW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1208 - 1212
[6] AN ANALYTICAL EVALUATION OF GAAS GROWN WITH COMMERCIAL AND REPURIFIED TRIMETHYLGALLIUM
HESS, KL
DAPKUS, PD
MANASEVIT, HM
LOW, TS
SKROMME, BJ
STILLMAN, GE
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (06) : 1115 - 1137
[7] OMVPE GROWTH OF INP USING TMIN
HSU, CC
COHEN, RM
STRINGFELLOW, GB
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (01) : 8 - 12
[8] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .5. FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYS
MANASEVI.HM
SIMPSON, WI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 135 - 137
[9] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP AND RELATED-COMPOUNDS
RAZEGHI, M
POISSON, MA
LARIVAIN, JP
DUCHEMIN, JP
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 371 - 395
[10] ELECTRON TRANSPORT IN GAAS
RODE, DL
KNIGHT, S
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08): : 2534 - &

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