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AN ANALYTICAL EVALUATION OF GAAS GROWN WITH COMMERCIAL AND REPURIFIED TRIMETHYLGALLIUM
被引:32
作者
:
HESS, KL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HESS, KL
[
1
]
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
DAPKUS, PD
[
1
]
MANASEVIT, HM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
MANASEVIT, HM
[
1
]
LOW, TS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
LOW, TS
[
1
]
SKROMME, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
SKROMME, BJ
[
1
]
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
STILLMAN, GE
[
1
]
机构
:
[1]
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
来源
:
JOURNAL OF ELECTRONIC MATERIALS
|
1982年
/ 11卷
/ 06期
关键词
:
D O I
:
10.1007/BF02658919
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1115 / 1137
页数:23
相关论文
共 35 条
[1]
ASFAR MN, 1980, P S GAAS RELATED COM, P547
[2]
INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
ASHEN, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
ASHEN, DJ
DEAN, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
DEAN, PJ
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
HURLE, DTJ
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
MULLIN, JB
WHITE, AM
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
WHITE, AM
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1975,
36
(10)
: 1041
-
1053
[3]
THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS
CHAI, YG
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FAC SUBMICRON STRUCT,ITHACA,NY 14853
CHAI, YG
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FAC SUBMICRON STRUCT,ITHACA,NY 14853
WOOD, CEC
CHOW, R
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FAC SUBMICRON STRUCT,ITHACA,NY 14853
CHOW, R
[J].
APPLIED PHYSICS LETTERS,
1981,
39
(10)
: 800
-
803
[4]
INDUCED PHONON-SIDEBAND LASER OPERATION OF LARGE-QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURES LZ-200-500 A)
COLEMAN, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
COLEMAN, JJ
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
DAPKUS, PD
VOJAK, BA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
VOJAK, BA
LAIDIG, WD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
LAIDIG, WD
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HOLONYAK, N
HESS, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HESS, K
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(01)
: 15
-
17
[5]
CHARACTERIZATION OF DONORS IN GAAS EPITAXIAL-FILMS BY FAR-INFRARED PHOTOCONDUCTIVE TECHNIQUES
COOKE, RA
论文数:
0
引用数:
0
h-index:
0
COOKE, RA
HOULT, RA
论文数:
0
引用数:
0
h-index:
0
HOULT, RA
KIRKMAN, RF
论文数:
0
引用数:
0
h-index:
0
KIRKMAN, RF
STRADLING, RA
论文数:
0
引用数:
0
h-index:
0
STRADLING, RA
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1978,
11
(06)
: 945
-
953
[6]
HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
DAPKUS, PD
MANASEVIT, HM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
MANASEVIT, HM
HESS, KL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HESS, KL
LOW, TS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
LOW, TS
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
STILLMAN, GE
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 10
-
23
[7]
ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
DAPKUS, PD
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(07)
: 466
-
468
[8]
700-H CONTINUOUS ROOM-TEMPERATURE OPERATION OF ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International, Electronic Devices Division, Electronics Research Center, Anaheim
DUPUIS, RD
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(04)
: 311
-
314
[9]
HIGH-EFFICIENCY GAALAS-GAAS HETEROSTRUCTURE SOLAR-CELLS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ANAHEIM,CA 92803
ROCKWELL INT,ANAHEIM,CA 92803
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ANAHEIM,CA 92803
ROCKWELL INT,ANAHEIM,CA 92803
DAPKUS, PD
YINGLING, RD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ANAHEIM,CA 92803
ROCKWELL INT,ANAHEIM,CA 92803
YINGLING, RD
MOUDY, LA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ANAHEIM,CA 92803
ROCKWELL INT,ANAHEIM,CA 92803
MOUDY, LA
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(03)
: 201
-
203
[10]
VERY LOW THRESHOLD GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METAL ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
DAPKUS, PD
[J].
APPLIED PHYSICS LETTERS,
1978,
32
(08)
: 473
-
475
←
1
2
3
4
→
共 35 条
[1]
ASFAR MN, 1980, P S GAAS RELATED COM, P547
[2]
INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
ASHEN, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
ASHEN, DJ
DEAN, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
DEAN, PJ
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
HURLE, DTJ
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
MULLIN, JB
WHITE, AM
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
WHITE, AM
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1975,
36
(10)
: 1041
-
1053
[3]
THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS
CHAI, YG
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FAC SUBMICRON STRUCT,ITHACA,NY 14853
CHAI, YG
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FAC SUBMICRON STRUCT,ITHACA,NY 14853
WOOD, CEC
CHOW, R
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FAC SUBMICRON STRUCT,ITHACA,NY 14853
CHOW, R
[J].
APPLIED PHYSICS LETTERS,
1981,
39
(10)
: 800
-
803
[4]
INDUCED PHONON-SIDEBAND LASER OPERATION OF LARGE-QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURES LZ-200-500 A)
COLEMAN, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
COLEMAN, JJ
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
DAPKUS, PD
VOJAK, BA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
VOJAK, BA
LAIDIG, WD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
LAIDIG, WD
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HOLONYAK, N
HESS, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HESS, K
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(01)
: 15
-
17
[5]
CHARACTERIZATION OF DONORS IN GAAS EPITAXIAL-FILMS BY FAR-INFRARED PHOTOCONDUCTIVE TECHNIQUES
COOKE, RA
论文数:
0
引用数:
0
h-index:
0
COOKE, RA
HOULT, RA
论文数:
0
引用数:
0
h-index:
0
HOULT, RA
KIRKMAN, RF
论文数:
0
引用数:
0
h-index:
0
KIRKMAN, RF
STRADLING, RA
论文数:
0
引用数:
0
h-index:
0
STRADLING, RA
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1978,
11
(06)
: 945
-
953
[6]
HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
DAPKUS, PD
MANASEVIT, HM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
MANASEVIT, HM
HESS, KL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HESS, KL
LOW, TS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
LOW, TS
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
STILLMAN, GE
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 10
-
23
[7]
ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
ROCKWELL INT,ELECTR RECH CTR,DIV ELECTR DEVICE,ANAHEIM,CA 92803
DAPKUS, PD
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(07)
: 466
-
468
[8]
700-H CONTINUOUS ROOM-TEMPERATURE OPERATION OF ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International, Electronic Devices Division, Electronics Research Center, Anaheim
DUPUIS, RD
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(04)
: 311
-
314
[9]
HIGH-EFFICIENCY GAALAS-GAAS HETEROSTRUCTURE SOLAR-CELLS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ANAHEIM,CA 92803
ROCKWELL INT,ANAHEIM,CA 92803
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ANAHEIM,CA 92803
ROCKWELL INT,ANAHEIM,CA 92803
DAPKUS, PD
YINGLING, RD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ANAHEIM,CA 92803
ROCKWELL INT,ANAHEIM,CA 92803
YINGLING, RD
MOUDY, LA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,ANAHEIM,CA 92803
ROCKWELL INT,ANAHEIM,CA 92803
MOUDY, LA
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(03)
: 201
-
203
[10]
VERY LOW THRESHOLD GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METAL ORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
DAPKUS, PD
[J].
APPLIED PHYSICS LETTERS,
1978,
32
(08)
: 473
-
475
←
1
2
3
4
→