THE COLLAPSE OF CURRENT GAIN IN MULTI-FINGER HETEROJUNCTION BIPOLAR-TRANSISTORS - ITS SUBSTRATE-TEMPERATURE DEPENDENCE, INSTABILITY CRITERIA AND MODELING

One undesirable phenomenon observed when AlGaAs/GaAs heterojunction bipolar transistors (HBT's) are operated under high power density is the collapse (of current gain). The collapse manifests itself by a distinct abrupt decrease of collector current in the transistor common-emitter current-voltage (I-V) characteristics. In this investigation, we study the substrate temperature dependence of the collapse. A unified equation is introduced to relate the collapse instability criterion with other thermal instability criteria proposed for the silicon bipolar transistors. The effects of the thermal instability on the collapse behavior of 2-finger and 1-finger HBT's are examined. We also present a numerical model to adequately describe the collapse in multi-finger HBT's having arbitrary geometry. The I-V characteristics and regression plots of both ballasted and unballasted HBT's are compared.