GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - ISSUES AND PROSPECTS FOR APPLICATION

[1] BAYRAKTAROGLU B, 1988, IEEE MTT S, P529

[2] BIPOLAR MICROWAVE LINEAR POWER TRANSISTOR DESIGN [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (05) : 423 - 430

[3] Chen Y. K., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P876, DOI 10.1109/IEDM.1988.32949

[4] HIGH-FREQUENCY PERFORMANCE LIMITATIONS OF MILLIMETER-WAVE HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) : 604 - 614

[5] ENQUIST P, 1988 EL MAT C

[6] GEORGE J, 1989, ISSCC

[7] HAYAMA N, 1988, MTTT S S, P679

[8] Higgins J. A., 1988, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 10th Annual GaAs IC Symposium Technical Digest 1988 (IEEE Cat. No.88CH2599-9), P33, DOI 10.1109/GAAS.1988.11017

[9] A POSSIBLE NEAR-BALLISTIC COLLECTION IN AN ALGAAS GAAS HBT WITH A MODIFIED COLLECTOR STRUCTURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) : 401 - 404

[10] CURRENT GAIN ENHANCEMENT IN GRADED BASE ALGAAS/GAAS HBTS ASSOCIATED WITH ELECTRON-DRIFT MOTION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (04): : L241 - L243

[1] BAYRAKTAROGLU B, 1988, IEEE MTT S, P529

[2] BIPOLAR MICROWAVE LINEAR POWER TRANSISTOR DESIGN [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (05) : 423 - 430

[3] Chen Y. K., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P876, DOI 10.1109/IEDM.1988.32949

[4] HIGH-FREQUENCY PERFORMANCE LIMITATIONS OF MILLIMETER-WAVE HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) : 604 - 614

[5] ENQUIST P, 1988 EL MAT C

[6] GEORGE J, 1989, ISSCC

[7] HAYAMA N, 1988, MTTT S S, P679

[8] Higgins J. A., 1988, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 10th Annual GaAs IC Symposium Technical Digest 1988 (IEEE Cat. No.88CH2599-9), P33, DOI 10.1109/GAAS.1988.11017

[9] A POSSIBLE NEAR-BALLISTIC COLLECTION IN AN ALGAAS GAAS HBT WITH A MODIFIED COLLECTOR STRUCTURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) : 401 - 404

[10] CURRENT GAIN ENHANCEMENT IN GRADED BASE ALGAAS/GAAS HBTS ASSOCIATED WITH ELECTRON-DRIFT MOTION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (04): : L241 - L243