GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - ISSUES AND PROSPECTS FOR APPLICATION

[11] Kim M. E., 1988, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 10th Annual GaAs IC Symposium Technical Digest 1988 (IEEE Cat. No.88CH2599-9), P117, DOI 10.1109/GAAS.1988.11038

[12] 2 INTEGRAL RELATIONS PERTAINING TO THE ELECTRON-TRANSPORT THROUGH A BIPOLAR-TRANSISTOR WITH A NONUNIFORM ENERGY-GAP IN THE BASE REGION [J]. SOLID-STATE ELECTRONICS, 1985, 28 (11) : 1101 - 1103

[13] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[14] DARK CURRENT REDUCTION IN ALXGA1-XAS-GAAS HETEROJUNCTION DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 275 - 278

[15] SUPER-GAIN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING AN EMITTER EDGE-THINNING DESIGN [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 839 - 841

[16] ELECTRICAL BEHAVIOR OF AN NPN GAA1AS-GAAS HETEROJUNCTION TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1979, 22 (06) : 549 - 557

[17] A PROPOSED STRUCTURE FOR COLLECTOR TRANSIT-TIME REDUCTION IN ALGAAS-GAAS BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (08) : 483 - 485

[18] Mishra U. K., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P873, DOI 10.1109/IEDM.1988.32948

[19] SILICON GERMANIUM-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) : 165 - 167

[20] UNILATERAL GAIN OF HETEROJUNCTION BIPOLAR-TRANSISTORS AT MICROWAVE-FREQUENCIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2288 - 2294

[11] Kim M. E., 1988, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 10th Annual GaAs IC Symposium Technical Digest 1988 (IEEE Cat. No.88CH2599-9), P117, DOI 10.1109/GAAS.1988.11038

[12] 2 INTEGRAL RELATIONS PERTAINING TO THE ELECTRON-TRANSPORT THROUGH A BIPOLAR-TRANSISTOR WITH A NONUNIFORM ENERGY-GAP IN THE BASE REGION [J]. SOLID-STATE ELECTRONICS, 1985, 28 (11) : 1101 - 1103

[13] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[14] DARK CURRENT REDUCTION IN ALXGA1-XAS-GAAS HETEROJUNCTION DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 275 - 278

[15] SUPER-GAIN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING AN EMITTER EDGE-THINNING DESIGN [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 839 - 841

[16] ELECTRICAL BEHAVIOR OF AN NPN GAA1AS-GAAS HETEROJUNCTION TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1979, 22 (06) : 549 - 557

[17] A PROPOSED STRUCTURE FOR COLLECTOR TRANSIT-TIME REDUCTION IN ALGAAS-GAAS BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (08) : 483 - 485

[18] Mishra U. K., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P873, DOI 10.1109/IEDM.1988.32948

[19] SILICON GERMANIUM-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) : 165 - 167

[20] UNILATERAL GAIN OF HETEROJUNCTION BIPOLAR-TRANSISTORS AT MICROWAVE-FREQUENCIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2288 - 2294