HIGH-FREQUENCY PERFORMANCE LIMITATIONS OF MILLIMETER-WAVE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：50

作者：

DAS, MB

机构：

[1] Pennsylvania State Univ, University, Park, PA, USA, Pennsylvania State Univ, University Park, PA, USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 05期

关键词：

Manuscript received July 28; 1987; revised December 15; 1987. This work resulted in part from an industryhniversity cooperative NSF research program between The Pennsylvania State University and the G.E. Electronics Laboratory; Syracuse; NY; under NSF Grant ECS-85-03894; monitored by Dr. D. J. Silversmith. The concluding part of this work was done at the Chalmers University of Technology; Gothenburg; Sweden; where the author spent the Fall of 1987 as a Guest Professor in the Department of Radio and Space Science. An invited paper in part based on this work was presented at the Engineering Foundation Conference on Ballistic Electrons for Transistors; Santa Barbara; CA; March; 21-26;

D O I：

10.1109/16.2502

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：604 / 614

页数：11

共 22 条

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