QUANTITATIVE STUDY OF EMITTER BALLASTING

[1] SOME NEW ASPECTS OF THERMAL INSTABILITY OF CURRENT DISTRIBUTION IN POWER TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 630 - +

[2] LINDMAYER J, 1965, FUNDAMENTALS SEMICON

[3] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[4] MUELLER O, 1964, P IEEE, P924

[5] SECOND BREAKDOWN IN FORWARD AND REVERSE BASE CURRENT REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 655 - &

[6] SELFHEATING AND THERMAL RUNAWAY PHENOMENA IN SEMICONDUCTOR DEVICES [J]. SOLID-STATE ELECTRONICS, 1970, 13 (04) : 441 - &

[7] RF POWER TRANSISTORS FOR RELIABLE COMMUNICATIONS SYSTEMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) : 816 - +

[8] THERMAL SWITCHBACK IN HIGH FT EPITAZ2AL TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 635 - +

[9] EXPERIMENTAL DEMONSTARTION AND THEORY OF A CORRECTIVE TO SECOND BREAKDOWN IN SI POWER TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 643 - +

[10] THERMAL PROPERTIES OF HIGH-POWER TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (05) : 260 - +

[1] SOME NEW ASPECTS OF THERMAL INSTABILITY OF CURRENT DISTRIBUTION IN POWER TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 630 - +

[2] LINDMAYER J, 1965, FUNDAMENTALS SEMICON

[3] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[4] MUELLER O, 1964, P IEEE, P924

[5] SECOND BREAKDOWN IN FORWARD AND REVERSE BASE CURRENT REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 655 - &

[6] SELFHEATING AND THERMAL RUNAWAY PHENOMENA IN SEMICONDUCTOR DEVICES [J]. SOLID-STATE ELECTRONICS, 1970, 13 (04) : 441 - &

[7] RF POWER TRANSISTORS FOR RELIABLE COMMUNICATIONS SYSTEMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) : 816 - +

[8] THERMAL SWITCHBACK IN HIGH FT EPITAZ2AL TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 635 - +

[9] EXPERIMENTAL DEMONSTARTION AND THEORY OF A CORRECTIVE TO SECOND BREAKDOWN IN SI POWER TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 643 - +

[10] THERMAL PROPERTIES OF HIGH-POWER TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (05) : 260 - +