NEGATIVE OUTPUT DIFFERENTIAL RESISTANCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：22

作者：

GAO, GB ^{[1
]}

FAN, ZF ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 02期

关键词：

D O I：

10.1063/1.108217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A thermal-electrical model is presented to describe the negative output differential resistance in AlGaAs/GaAs heterojunction bipolar transistors. Included in this model are the base band-gap shrinkage due to heavy doping, temperature dependence of AlGaAs and GaAs band gaps, and valence band discontinuity. The experimental results unambiguously support the predictions of the model.

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页码：198 / 200

页数：3

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