EXPERIMENTAL-STUDY OF ALGAAS/GAAS HBT DEVICE DESIGN FOR POWER APPLICATIONS

被引：16

作者：

HAFIZI, M ^{[1
]}

STREIT, DC ^{[1
]}

TRAN, LT ^{[1
]}

KOBAYASHI, KW ^{[1
]}

UMEMOTO, DK ^{[1
]}

OKI, AK ^{[1
]}

WANG, SK ^{[1
]}

机构：

[1] TRW CO INC,ADV MICROELECTR LAB,REDONDO BEACH,CA 90278

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 11期

关键词：

D O I：

10.1109/55.119204

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental study of AlGaAs/GaAs HBT device design for optimizing key dc and RF performance parameters relevant to power device applications is reported. The design of the collector, base, and base-emitter junction is investigated for improved power device performance and novel device structures are presented. Device scaling effects and the extent to which air-bridged interconnect can reduce parasitics in large power devices is also explored. Power HBT's employing some of the optimized design features have achieved a power output of 1.2 W (4 W/mm) with 43% power-added efficiency (PAE) at 10 GHz.

引用

页码：581 / 583

页数：3

共 9 条

[1]

Bayraktaroglu B., 1989, IEEE 1989 MTT-S International Microwave Symposium Digest (Cat. No.89CH2725-0), P1057, DOI 10.1109/MWSYM.1989.38904

[2] BREAKDOWN BEHAVIOR OF GAAS/ALGAAS HBTS [J].