MEASUREMENT OF JUNCTION TEMPERATURE OF AN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR OPERATING AT LARGE POWER DENSITIES

被引：44

作者：

LIU, W ^{[1
]}

YUKSEL, A ^{[1
]}

机构：

[1] MIT, CAMBRIDGE, MA 02139 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 02期

关键词：

D O I：

10.1109/16.370056

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An electrical method to determine the junction temperature of a power bipolar transistor is presented. The success of this method does not rely on the constancy of thermal resistance over the wide range of operating temperatures. It is hence suitable for transistors operating at high power densities where conventional measurement techniques would not apply. Using this method, we establish that the junction temperature can be 40 degrees C higher than the product of the low temperature thermal resistance and the power dissipation.

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页码：358 / 360

页数：3

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